SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A) • Low Ciss : Ciss = 2100 pF

文件：72.37 Kbytes 页数：8 Pages

NEC

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 6 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：52.09 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

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PANASONIC

松下

Low-Frequency Amp Applications?

Low-Frequency Amplifier Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, and constant-current regulators.

文件：70.31 Kbytes 页数：3 Pages

SANYO

三洋

N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)

FM Tuner, VHF RF Amplifier Applications Low reverse transfer capacitance: Crss= 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: Gps= 28dB (typ.) Recommend operation voltage: 5~15 V

文件：252.35 Kbytes 页数：6 Pages

TOSHIBA

东芝

Silicon N-Channel Power F-MOS FET

Panasonic

松下

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)

Toshiba

东芝

2SK300

文件：82.4 Kbytes 页数：2 Pages

SONYSony Corporation

索尼

Silicon N Channel MOS FET Low Frequency Power Switching

Features • Low on-resistance RDS(on)= 0. 25Ω typ. (VGS= 10 V, ID= 450 mA) • 4V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability

文件：47.5 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司