丝印：ZY-；Package：SOT-23；Silicon N Channel MOS FET Low Frequency Power Switching

Silicon N Channel MOS FET Low Frequency Power Switching Features • Low on-resistance RDS(on) = 0.16 Ω typ. (VGS= 10 V, ID= 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability

文件：119.93 Kbytes 页数：7 Pages

RENESAS

瑞萨

GaAs HEMT Low Noise Amplifier

Features · Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) · High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz) · Small package. (CMPAK-4)

文件：107.52 Kbytes 页数：14 Pages

HITACHIHitachi Semiconductor

日立日立公司

External dimensions

External dimensions 1 ...... FM20 *1: PW 100µs, duty cycle 1 *2: VDD = 25V, L = 650µH, IL = 18A, unclamped, RG = 50Ω, See Figure 1 on Page 5.

文件：38.51 Kbytes 页数：2 Pages

SANKEN

三垦

External dimensions 1

External dimensions 1 ...... FM20

文件：35.18 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

External dimensions 1 ...... FM20

External dimensions 1 ...... FM20

文件：22.46 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

External dimensions

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

文件：49.12 Kbytes 页数：2 Pages

SANKEN

三垦

VX-2 Series Power MOSFET(600V 8A)

N-Channel Enhancement type FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching power supply of AC 100-200V input ● Inverter

文件：391.01 Kbytes 页数：10 Pages

SHINDENGEN

SI N CHANNEL JUCTION

2SK247 Si N-Channel Junction 1Page Wide-Band,Low-Noise Amplifier 2SK301 Si N-Channel Junction 3Page AF Amplifier, Switching 2SK316 Si N-Channel Junction 5Page Vide Camera First Stage Amplifier

文件：212.62 Kbytes 页数：6 Pages

PANASONIC

松下

VX-2 Series Power MOSFET(600V 16A)

FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching power supply of AC 100~200V input ● Inverter ● Power Factor Control Circuit

文件：431.5 Kbytes 页数：12 Pages

SHINDENGEN

N CHANNEL MOS TYPE (HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON)= 1.05 Ω(typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 720 V) Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 m

文件：297.88 Kbytes 页数：5 Pages

TOSHIBA

东芝