丝印：ZY-；Package：SOT-23；Silicon N Channel MOS FET Low Frequency Power Switching

Silicon N Channel MOS FET Low Frequency Power Switching Features • Low on-resistance RDS(on) = 0.16 Ω typ. (VGS= 10 V, ID= 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability

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丝印：ZY-；Package：SOT-23；Silicon N Channel MOS FET Low Frequency Power Switching

文件：173.38 Kbytes 页数：8 Pages

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丝印：ZY-***；Package：SOT-25；500mA, Low Dropout, Low Noise Ultra-Fast Without Bypass Capacitor CMOS LDO Regulator

General Description The RT9013 is a high-performance, 500mA LDO regulator, offering extremely high PSRR and ultra-low dropout. Ideal for portable RF and wireless applications with demanding performance and space requirements. Features Wide Operating Voltage Ranges : 2.2V to 5.5V Low

文件：300.61 Kbytes 页数：12 Pages

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