Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N-Channel Enhancement Mode Field Effect Transistor

Features • Low ON-Resistance • Low Input Capacitance • Low Voltage drive makes this device idipmenteal for portable equipment • Fast Switching Speed • Easily Designed Drive Circuits • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

文件：715.95 Kbytes 页数：4 Pages

MCC

丝印：KN；Package：SOT-323；Small switching (30V, 0.1A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Interfacing, switching (30V, 100mA)

文件：89.08 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：KN；Package：UMT3；2.5V Drive Nch MOS FET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Interfacing, switching (30V, 100mA)

文件：79.1 Kbytes 页数：4 Pages

ROHM

罗姆

N-Channel Enhancement-Mode MOS FETs

N-Channel Enhancement-Mode MOSFETs

文件：315.71 Kbytes 页数：3 Pages

GSME

桂微

N-Channel Enhancement Mode MOSFET

• Structure Silicon N-channel MOSFET • Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. • Applications Interfacing, switching (3

文件：984.65 Kbytes 页数：4 Pages

HTSEMI

金誉半导体

N-channel MOSFET

N-channel MOSFET FEATURE ● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for Portable equipment ● Easily designed drive circuits ● Easy to parallel APPLICATION ● Interfacing , Switching

文件：1.36834 Mbytes 页数：5 Pages

JIANGSU

长电科技

N-Channel MOSFET

■ Features ● Lowon-resistance. ● Fast switching speed. ● Silicon N-channelMOSFET ● Drive circuitscan be simple.

文件：81.85 Kbytes 页数：2 Pages

KEXIN

科信电子

SOT-23 Plastic-Encapsu l ate MOSFET

N -Channel MOSFET Features ● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for Portable equipment ● Easily designed drive circuits ● Easy to parallel Applications ● Interfacing , Switching

文件：2.46499 Mbytes 页数：5 Pages

HDSEMI

海德半导体

N-Channel 30-V(D-S) MOSFET

zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) ESD protected 2KV HBM zApplications Interfacing, switching (30V, 100mA)

文件：2.78178 Mbytes 页数：4 Pages

TUOFENG

拓锋半导体