SOT-323 Plastic-Encapsulate N-channel MOSFETS

FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Easily designed drive circuits Easy to parallel Portable equipment APPLICATION Interfacing , Switching

文件：1.8611 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Applications Interfacing, switching.

文件：1.1857 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Low on-resistance, Fast switching spped, Silicon N-channel MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive cirduits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)

文件：418.03 Kbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：KN；Package：SOT-23；Plastic-Encapsulate MOSFETS

FEATURES  Low on-resistance  Fast switching speed  Low voltage drive makes this device  Easily designed drive circuits  Easy to parallel ideal for portable equipment

文件：339.59 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 0.1 A ● RDS(ON)

文件：1.14076 Mbytes 页数：3 Pages

KEXIN

科信电子

SOT-23 Plastic-Encapsulate MOS FETS

FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel

文件：435.15 Kbytes 页数：3 Pages

WILLAS

威伦电子

ESD protected N-Channel Enhancement Mode MOSFET

Description • Low voltage drive(2V drive) makes this device ideal for portable equipment. • High speed switching • ESD protected device • Pb-free lead plating & halogen-free package

文件：324.82 Kbytes 页数：8 Pages

CYSTEKEC

全宇昕科技

丝印：KN；Package：UMT3；2.5V Drive Nch MOS FET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Interfacing, switching (30V, 100mA)

文件：79.1 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：KN；Package：UMT3F；2.5V Drive Nch MOSFET

Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low voltage drive(2.5V drive). Application Switching

文件：960.11 Kbytes 页数：6 Pages

ROHM

罗姆

N-Channel POWER MOSFET

Description: * Low on-resistance. * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel. Features: * Simple Drive Requirement * Small Package Outline

文件：731.39 Kbytes 页数：5 Pages

WEITRON