Silicon N-Channel Power F-MOS FET

■Features ●Avalanche energy capacity guaranteed ●High-speed switching ●Low ON-resistance ●No secondary breakdown ●Low-voltage drive ●High electrostatic breakdown voltage ■Applications ●Contactless relay ●Diving circuit for a solenoid ●Driving circuit for a motor

文件：24 Kbytes 页数：1 Pages

PANASONIC

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Silicon N-Channel Power F-MOS FET

■Features ●Avalanche energy capacity guaranteed ●High-speed switching ●Low ON-resistance ●No secondary breakdown ●Low-voltage drive ●High electrostatic breakdown voltage ■Applications ●Contactless relay ●Diving circuit for a solenoid ●Driving circuit for a motor

文件：23.94 Kbytes 页数：1 Pages

PANASONIC

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Silicon N-Channel Power F-MOS FET

■Features ●Avalanche energy capacity guaranteed ●High-speed switching ●Low ON-resistance ●No secondary breakdown ●Low-voltage drive ●High electrostatic breakdown voltage ■Applications ●Contactless relay ●Diving circuit for a solenoid ●Driving circuit for a motor

文件：24.02 Kbytes 页数：1 Pages

PANASONIC

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Low-Frequency Amp Applications?

Low-Frequency Amplifier Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, and constant-current regulators.

文件：70.31 Kbytes 页数：3 Pages

SANYO

三洋

Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

文件：42.71 Kbytes 页数：3 Pages

PANASONIC

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Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

文件：45.78 Kbytes 页数：3 Pages

PANASONIC

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Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

文件：45.03 Kbytes 页数：3 Pages

PANASONIC

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Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power suppl

文件：45.18 Kbytes 页数：3 Pages

PANASONIC

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Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

文件：45.33 Kbytes 页数：3 Pages

PANASONIC

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Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

文件：44.05 Kbytes 页数：3 Pages

PANASONIC

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