Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

文件：45.21 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

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PANASONIC

松下

Small switching (600V, 2A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching Structure Silicon N-channel MOSFET

文件：98.21 Kbytes 页数：5 Pages

ROHM

罗姆

10V Drive Nch MOS FET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching Structure Silicon N-channel MOSFET

文件：107.94 Kbytes 页数：6 Pages

ROHM

罗姆

Small Switching

Features Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Gate-source voltage (VGSS) guaranteed to be 30V. Easily designed drive circuits. Easy to use in parallel. Silicon N-channel MOSFET

文件：44.1 Kbytes 页数：1 Pages

KEXIN

科信电子

10V Drive Nch MOS FET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching Structure Silicon N-channel MOSFET

文件：107.94 Kbytes 页数：6 Pages

ROHM

罗姆

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator DC−DC Converter, and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 27 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) ● Enhancement mode : Vth = 1.5 to 3.0 V (VDS = 10 V, ID =

文件：140.23 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments. FEATURES • Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 m

文件：316.64 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments. FEATURES • Low On-State Resistance RDS(on)1= 45 mΩMAX. (VGS= 10 V, ID= 13 A) R

文件：68.75 Kbytes 页数：8 Pages

NEC

瑞萨