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型号	下载订购	功能描述	制造商上传企业	LOGO
2SK3060-S	文件：99.57 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in 文件：99.57 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SK3060-S	文件：249.03 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 文件：249.03 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SK3060-Z	文件：249.03 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 文件：249.03 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SK3060-Z	文件：99.57 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in 文件：99.57 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SK3060-ZJ	文件：99.57 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in 文件：99.57 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SK3060-ZJ	文件：249.03 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 文件：249.03 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SK3061	文件：233.82 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3061 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 文件：233.82 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SK3061	文件：64.94 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE This product is N-Channel MOS Field Effect Transistor designed for high current switching application. * Low on-state resistance RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A) * Low Ciss: Ciss= 5200 pF TYP. * Built-in gate pro 文件：64.94 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SK3062	文件：69.94 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, I 文件：69.94 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SK3062	文件：245.24 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID 文件：245.24 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS

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技术参数

Vgs (off) (V) max.：
2.1
Nch/Pch：
Nch
VGSS (V)：
10
Number of Channels：
Single
Pch (W)：
0.4
Configuration [Device]：
Built-In SBD
Application：
Low Voltage General Switching
VDSS (V) max.：
40
Mounting Type：
Surface Mount
ID (A)：
1
Package Type：
MPAK/SC-59
RDS (ON) (mohm) max. @4V or 4.5V：
500
Production Status：
Non-promotion
RDS (ON) (mohm) max. @10V or 8V：
300
Ordering Condition：
Large order only
Ciss (pF) typ.：
14

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	2SK30	TOS	24+	TO-92	20000		询价
深圳市振宏微科技有限公司	2SK30	TO-92	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
上海意淼电子科技有限公司	2SK30	TOS	23+	小功率三极管	20000	全新原装假一赔十	询价
深圳市旺财半导体有限公司	2SK30	TOS	23+	DIP	5800	正品原装货价格低	询价
深圳市富芯乐电子科技有限公司	2SK30	TOS	24+	DIP	3100	只做原装正品现货欢迎来电查询15919825718	询价
深圳市毅创腾电子科技有限公司	2SK30ATM-GR	TOS	23+	TO92	1500	绝对全新原装!优势供货渠道!特价!请放心订购!	询价
深圳市粤科源兴科技有限公司	2SK301	KODENSHI	13+	DIP	21108	原装分销	询价
深圳市勤思达科技有限公司	2SK3067	TOSHIBA	15+	TO-220	11560	全新原装,现货库存,长期供应	询价
深圳市联世界科技有限公司	2SK30ATM-O(SONY,F)	TOSHIBA	24+/25+		400	原装正品现货库存价优	询价
千层芯半导体(深圳)有限公司	2SK3018T106	ROHM	24+	SOT-323	6230	只做原装正品	询价

更多2SK30供应商更新时间2026-1-17 16:30:00

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