首页 >2SK30>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

2SK3070STL-E

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)=4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件:94.2 Kbytes 页数:9 Pages

RENESAS

瑞萨

2SK3072

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Ultrahigh-speed switching. • Low-voltage drive.

文件:26.95 Kbytes 页数:4 Pages

SANYO

三洋

2SK3074

N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)

RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA produ

文件:112.74 Kbytes 页数:3 Pages

TOSHIBA

东芝

2SK3074

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

2SK3075

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

2SK3075

N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)

FIELD EFFECT TRANSISTOR SILICON N CHANNELMOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER (Note)The TOSHIBA products listed inthis document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warran

文件:115.71 Kbytes 页数:3 Pages

TOSHIBA

东芝

2SK3076

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current. • Built-in fast recovery diode (trr=120 ns)

文件:51.89 Kbytes 页数:9 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SK3076L

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current. • Built-in fast recovery diode (trr=120 ns)

文件:51.89 Kbytes 页数:9 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SK3076S

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current. • Built-in fast recovery diode (trr=120 ns)

文件:51.89 Kbytes 页数:9 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SK3077

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

技术参数

  • Vgs (off) (V) max.:

    2.1

  • Nch/Pch:

    Nch

  • VGSS (V):

    10

  • Number of Channels:

    Single

  • Pch (W):

    0.4

  • Configuration [Device]:

    Built-In SBD

  • Application:

    Low Voltage General Switching

  • VDSS (V) max.:

    40

  • Mounting Type:

    Surface Mount

  • ID (A):

    1

  • Package Type:

    MPAK/SC-59

  • RDS (ON) (mohm) max. @4V or 4.5V:

    500

  • Production Status:

    Non-promotion

  • RDS (ON) (mohm) max. @10V or 8V:

    300

  • Ordering Condition:

    Large order only

  • Ciss (pF) typ.:

    14

供应商型号品牌批号封装库存备注价格
TOS
24+
TO-92
20000
询价
TO-92
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
TOS
23+
小功率三极管
20000
全新原装假一赔十
询价
TOS
23+
DIP
5800
正品原装货价格低
询价
TOS
24+
DIP
3100
只做原装正品现货 欢迎来电查询15919825718
询价
TOS
23+
TO92
1500
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
KODENSHI
13+
DIP
21108
原装分销
询价
TOSHIBA
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
TOSHIBA
24+/25+
400
原装正品现货库存价优
询价
ROHM
24+
SOT-323
6230
只做原装正品
询价
更多2SK30供应商 更新时间2026-1-17 16:30:00