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2SK3077

900 MHz BAND AMPLIFIER APPLICATIONS

900 MHz BAND AMPLIFIER APPLICATIONS (GSM) (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in th

文件:111.23 Kbytes 页数:4 Pages

TOSHIBA

东芝

2SK3077A

VHF/UHF Band Amplifier Applications

VHF/UHF Band Amplifier Applications Output power: Po ≥20.5dBmW Gain: Gp ≥ 10.5dB Drain Efficiency: ηD ≥50

文件:113.38 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SK3078

900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Output Power : PO= 27.0 dBmW (Min.) Gain : GP= 12.5 dB (Min.) Drain Efficiency : ηD= 46 (Typ.)

文件:172.96 Kbytes 页数:3 Pages

TOSHIBA

东芝

2SK3078A

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

2SK3078A

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

VHF/UHF Band Amplifier Applications The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document ex

文件:121.49 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SK3079A

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

470 MHz Band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this doc

文件:114.22 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SK3079A

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

2SK3080

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching

文件:49.77 Kbytes 页数:9 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SK3081

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching

文件:50.16 Kbytes 页数:9 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SK3081

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching

文件:987.1 Kbytes 页数:7 Pages

RENESAS

瑞萨

技术参数

  • Vgs (off) (V) max.:

    2.1

  • Nch/Pch:

    Nch

  • VGSS (V):

    10

  • Number of Channels:

    Single

  • Pch (W):

    0.4

  • Configuration [Device]:

    Built-In SBD

  • Application:

    Low Voltage General Switching

  • VDSS (V) max.:

    40

  • Mounting Type:

    Surface Mount

  • ID (A):

    1

  • Package Type:

    MPAK/SC-59

  • RDS (ON) (mohm) max. @4V or 4.5V:

    500

  • Production Status:

    Non-promotion

  • RDS (ON) (mohm) max. @10V or 8V:

    300

  • Ordering Condition:

    Large order only

  • Ciss (pF) typ.:

    14

供应商型号品牌批号封装库存备注价格
TOS
24+
TO-92
20000
询价
TO-92
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
TOS
23+
小功率三极管
20000
全新原装假一赔十
询价
TOS
23+
DIP
5800
正品原装货价格低
询价
TOS
24+
DIP
3100
只做原装正品现货 欢迎来电查询15919825718
询价
TOS
23+
TO92
1500
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
KODENSHI
13+
DIP
21108
原装分销
询价
TOSHIBA
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
TOSHIBA
24+/25+
400
原装正品现货库存价优
询价
ROHM
24+
SOT-323
6230
只做原装正品
询价
更多2SK30供应商 更新时间2026-1-17 16:30:00