Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.24 Kbytes 页数：9 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：57.08 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：57.08 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.24 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：57.08 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.24 Kbytes 页数：9 Pages

RENESAS

瑞萨

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator DC−DC Converter, and Motor Drive Applications • 4 V gate drive • Low drain−source ON resistance : RDS (ON) = 40 mΩ (typ.) • High forward transfer admittance : |Yfs| = 27 S (typ.) • Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) • Enhancement−mode : Vth = 0.8~2.0 V (

文件：142.3 Kbytes 页数：2 Pages

TOSHIBA

东芝

Chopper Regulator, DC-DC Converter and Motor Drive Applications

Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.7 Ω (typ.) • High forward transfer admittance: |Yfs| = 3 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m

文件：207.59 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝