Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.24 Kbytes 页数：9 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：57.08 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

文件：401.37 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.24 Kbytes 页数：9 Pages

RENESAS

瑞萨