TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.) • High forward transfer admittance: |Yfs| = 60 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) • Enhancement model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)

文件：226.19 Kbytes 页数：6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications

文件：204.9 Kbytes 页数：6 Pages

TOSHIBA

东芝

DC-DC Converter, Relay Drive and

文件：192.55 Kbytes 页数：6 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type (pi-MOSVI) DC-DC Converter, Relay Drive and Motor Drive Applications

Toshiba

东芝

Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications

文件：204.9 Kbytes 页数：6 Pages

TOSHIBA

东芝

DC-DC Converter, Relay Drive and

文件：192.55 Kbytes 页数：6 Pages

TOSHIBA

东芝