isc N-Channel MOSFET Transistor

文件：343.69 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

Power MOSFET

文件：521.49 Kbytes 页数：5 Pages

SUNTAC

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)

Switching Regulator Applications • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancemen

文件：203.88 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type

Chopper Regulator DC−DC Converter and Motor Drive Applications • Fast reverse recovery time : trr = 105 ns (typ.) • Built-in high-speed free-wheeling diode • Low drain−source ON resistance : RDS (ON) = 0.085 Ω (typ.) • High forward transfer admittance : |Yfs| = 35 S (typ.) • Low leakage curre

文件：420.3 Kbytes 页数：6 Pages

TOSHIBA

东芝

Chopper Regulator DC-DC Converter, and Motor Drive Applications

Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Chopper Regulator DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON)= 0.07 Ω(typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS

文件：312.97 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：30.26 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：30.26 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：30.26 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司