SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on)= 0.4 Ω MAX.

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-stat

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RENESAS

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent\nswitching characteristics, and designed for high voltage applications such as DC/DC converter.FEATURES\n•Gate voltage rating ±30 V\n•Low on-state resistance RDS(on)= 0.4 Ω MAX. (VGS= 10 V, ID= •Gate voltage rating ±30 V\n•Low on-state resistance RDS(on)= 0.4 Ω MAX. (VGS= 10 V, ID= 5.0 A)\n•Low input capacitance Ciss= 400 pF TYP. (VDS= 10 V, VGS= 0 V)\n•Avalanche capability rated\n•Built-in gate protection diode\n•Surface mount device available;

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