SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)

HIGH SPEED POWER SWITCHING Complementary pair with 2SJ117

文件：49.56 Kbytes 页数：1 Pages

HitachiHitachi Semiconductor

日立日立公司

Drain Current ?밒D=3A@ TC=25C

文件：65.57 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on)

文件：67.72 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES •Gate vol

文件：239.51 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate vo

文件：238.65 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on)

文件：75.78 Kbytes 页数：8 Pages

NEC

瑞萨

MOS Field Effect Transistor

Features ● Gate voltage rating ±30 V ● Low on-state resistance RDS(on) = 180mΩ MAX. (VGS = 10 V, ID = 10A) ● Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V) ● Avalanche capability rated ● Built-in gate protection diode ● Surface mount device available

文件：46.78 Kbytes 页数：1 Pages

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on)

文件：75.78 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate vo

文件：238.65 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate vo

文件：238.65 Kbytes 页数：10 Pages

RENESAS

瑞萨