N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 0.4 Ω(typ.) High forward transfer admittance : |Yfs| = 9.0 S (typ.) Low leakage current : IDSS= 100μA (max) (VDS= 500 V) Enhancement mode : Vth= 2.0 to 4.0V (VDS= 10 V, ID= 1 mA)

文件：291.75 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 6 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：52.09 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 6 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：87.25 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 6 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：87.25 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)=4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：94.2 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：54.47 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：54.47 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)=4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：94.2 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：54.47 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司