MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, I

文件：69.94 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION\nThe 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n• Low on-state resistance\nRDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A)\nRDS(on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A)\n• Low Ciss: • Low on-state resistance\n• Low Ciss: Ciss= 5200 pF TYP.\n• Built-in gate protection diode;

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, I

文件：69.94 Kbytes 页数：8 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID

文件：245.24 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID

文件：245.24 Kbytes 页数：10 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID

文件：245.24 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, I

文件：69.94 Kbytes 页数：8 Pages

NEC

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