2SB1181

Marking：T100；Power Transistor

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

2SB1188

Marking：T100；Package：MPT3；Medium power Transistor(-32V, -2A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor

2SB1189

Marking：T100；Package：MPT3；Medium power transistor (-80V, -0.7A)

Features 1)Highbreakdownvoltage,BVCEO=-80V,andhighcurrent,IC=-0.7A. 2)Complementsthe2SB1767/2SB1859/2SB1200F. Features 1)Highbreakdownvoltage,BVCEO=80V,andhighcurrent,IC=0.7A. 2)Complementsthe2SB1189/2SB1238/2SB889F.

2SB1386

Marking：T100；Package：MPT3；Low Frequency Transistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

2SB1580

Marking：T100；Package：MPT3；Power Transistor (−100V , −2A)

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SD2195/2SD1980.

2SB1644

Marking：T100；Package：PSD3；Power Transistor (−80V, −4A)

Features 1)Lowsaturationvoltage. (Typ.VCE(sat)=−0.5VatIC/IB=−3A/−0.3A) 2)ExcellentDCcurrentgaincharacteristics.

2SC4132

Marking：T100；Package：MPT3；Power Transistor (120V, 1.5A)

Features 1)Highbreakdownvoltage.(BVCEO=120V) 2)Lowcollectoroutputcapacitance.(Typ.20pFatVCB=10V) 3)Hightransitionfrequency.(fT=80MHz) 4)Complementsthe2SB1236.

2SD2167

Marking：T100；Package：MPT3；Power Transistor (60V, 3A)

2SD2167

Marking：T100；Package：MPT3；Power Transistor (31/-4V, 2A)

2SK2103

Marking：T100；Package：MPT3；Small switching (30V, 2A)

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive(4V). 5)Easilydesigneddrivecircuits. 6)Easytouseinparallel.