丝印：T100；Power Transistor

Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.

文件：80.41 Kbytes 页数：3 Pages

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丝印：T100；Package：MPT3；Medium power Transistor(-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor

文件：93.7 Kbytes 页数：4 Pages

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丝印：T100；Package：MPT3；Medium power transistor (-80V, -0.7A)

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：69.82 Kbytes 页数：3 Pages

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丝印：T100；Package：MPT3；Low Frequency Transistor(-20V,-5A)

Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

文件：107.17 Kbytes 页数：5 Pages

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丝印：T100；Package：MPT3；Power Transistor (−100V , −2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

文件：78.28 Kbytes 页数：3 Pages

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丝印：T100；Package：PSD3；Power Transistor (−80V, −4A)

Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A) 2) Excellent DC current gain characteristics.

文件：52.48 Kbytes 页数：1 Pages

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丝印：T100；Package：MPT3；Power Transistor (120V, 1.5A)

Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236.

文件：80.43 Kbytes 页数：4 Pages

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丝印：T100；Package：MPT3；Power Transistor (60V, 3A)

文件：43.04 Kbytes 页数：1 Pages

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丝印：T100；Package：MPT3；Power Transistor (31/-4V, 2A)

文件：68.23 Kbytes 页数：3 Pages

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丝印：T100；Package：MPT3；Small switching (30V, 2A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel.

文件：127.68 Kbytes 页数：4 Pages

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