丝印：T100；Package：MPT3；Small switching (60V, 2A)

Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. Structure Silicon N-channel MOS FET t

文件：85.22 Kbytes 页数：4 Pages

ROHM

罗姆

Silicon N-Channel MOSFET

文件：45.2 Kbytes 页数：1 Pages

KEXIN

科信电子

N-Channel 60-V (D-S) MOSFET

文件：1.01907 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Transistors > MOS FET > Small Signal MOS FET

ROHM

罗姆

Small switching (60V, 2A)

Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. Structure Silicon N-channel MOS FET t

文件：85.22 Kbytes 页数：4 Pages

ROHM

罗姆

Small switching (60V, 2A)

Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. Structure Silicon N-channel MOS FET t

文件：85.22 Kbytes 页数：4 Pages

ROHM

罗姆