2N7002KG

N-ChSmallSignalMOSFETwithGateProtection

FEATURES z2kVESDProtection zLowerOn-resistance:2Ω zLowThreshold:2V(Typ.) zLowInputCapacitance:25pF zFastSwitchingPerformance:25nS zLowInputandOutputLeakage APPLICATIONS zDirectLogic-LevelInterface:TTL/CMOS zDrivers:Relays,Solenoi

2N7002K-HF

MOSFET

RoHSDevice N-Channel HalogenFree Features -SmallSignalMOSFET. -ESDprotected:1000V.

2N7002KL

SmallSignalMOSFET380mAmps,60VoltsN?밅hannelSOT-23

2N7002KM

N-ChannelMOSFET

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •ESDProtectedupto2.5KV(HBM) •Halogenfreeavailableuponrequestbyaddingsuffix-HF

2N7002KM

N-channelMOSFET

2N7002KM

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowonresistanceRDS(ON) •Lowgatethresholdvoltage •Lowinputcapacitance •ESDprotectedupto2KV

2N7002KM

N-ChannelMosfet

Application ®Load/PowerSwitching ®InterfacingSwitching ©LogicLevelShift

2N7002KQ

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002KQ

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedUpTo2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002KQissuitableforautomotiveapplications requirings

2N7002KQB

60VN-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallDFN1110D-3 (SOT8015)leadlessSurface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits •Logic-levelcompatible •Sidewettableflanksforoptical