2N7002KA

N-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelcompatible ■Veryfastswitching ■Subminiaturesurface-mountedpackage ■Gate-sourceElectroStaticDischarge(ESD)protectiondiodes Applicat

2N7002KA

NChannelMOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V. •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity. •SuffixU:QualifiedtoAEC-Q101. ex)2N7002KA-RTK/HU.

2N7002KA

NChannelMOSFETESDProtected2000V

2N7002KA

N-ChannelMOSFET

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •ESDProtectedupto2.5KV(HBM) •Halogenfreeavailableuponrequestbyaddingsuffix-HF

2N7002KA

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.32A RDS(ON)

2N7002K-AU

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

2N7002KB

MainProductCharacteristics

2N7002KB

60VN-ChannelMOSFET

Description Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawideva

2N7002KB

N-Channel60-V(D-S)MOSFET

2N7002KB

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)