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型号	下载订购	功能描述	制造商上传企业	LOGO
2N7002K-AU	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_A0_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_A0_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_A1_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_A1_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_A2_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_A2_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_AD_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_AD_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_AU_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT

技术参数

AEC-Q101 Qualified：
Y
ESD：
Y
Polarity：
N
Config.：
Single
VDS[V]：
60
VGS[±V]：
20
ID[A]：
0.3
RDS(on) Max. (mΩ)[10V]：
3000
RDS(on) Max. (mΩ)[4.5V]：
4000
Ciss Typ.[pF]：
35
VGS(th) Max.[V]：
2.5
Qg Typ. (nC)[4.5V]：
0.8
Package：
SOT-23

供应商	型号	品牌	批号	封装	库存	备注	价格
艾睿（深圳）半导体有限公司	2N7002K-AU	PANJIT/强茂	2447	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
贸泽芯城（深圳）电子科技有限公司	2N7002K-AU	PANJIT	23+	SMD	125800	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市纳睿斯电子科技有限公司	2N7002K-AU	PANJIT	25+		30000	原装现货,支持实单	询价
深圳市南科功率半导体有限公司	2N7002K-AU	NK/南科功率	2025+	SOT-23	986966	国产	询价
深圳市盈慧通电子有限公司	2N7002K-AU	PANJIT/强茂	2511	SOT-23	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
万三科技(深圳)有限公司	2N7002K-AU	PanJit(强茂)	25+	封装	500000	源自原厂成本,高价回收工厂呆滞	询价
深圳深宇韬电子科技有限公司	2N7002K-AU-R1	PANJIT/强茂	2023+	SOT-23	8800	正品渠道现货终端可提供BOM表配单。	询价
现代芯城（深圳）科技有限公司	2N7002K-AU_R1_000A2		24+	N/A	75000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市威尔健半导体有限公司	2N7002KA低压MOS管	VBSEMI/台湾微碧	23+	SOT23-3	50000	全新原装正品现货,支持订货	询价
深圳市博中泰实业有限公司	2N7002KA低压MOS管	VBSEMI/台湾微碧	24+	SOT23-3	60000		询价

更多2N7002K-AU供应商更新时间2025-12-2 15:01:00

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