2N7002K

NCEN-ChannelEnhancementModePowerMOSFET

GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON)

2N7002K

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •PbFree/RoHSCompliant •ESDHBM=2000V(Typical:3000V)asperJESD22A114 andESDCDM=2000VasperJESD2

2N7002K

DirectLogic-LevelInterface:TTL/CMOS

GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON)

2N7002K

N-ChannelMOSFET

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •ESDProtectedupto2KV(HBM) •Marking:72K •Halogenfreeavailableuponrequestbyaddingsuff

2N7002K

N-ChannelEnhancementModeFieldEffectTransistor

2N7002K

N-ChannelEnhanceentModeFieldEffectTransistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

2N7002K

SmallSignalMOSFET60V,380mA,Single,N?묬hannel,SOT??3

Features •ESDProtected •LowRDS(on) •SurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications

2N7002K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002K

N-ChannelEnhancementModePowerMOSFET

2N7002K

300mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION TheUTC2N7002KusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. „FEATURES *LowReverseTransferCapacitance(CRSS=typical3.0pF) *ESDProt