2N7002K

N-Channel60-V(D-S)MOSFET

2N7002K

NChannelMOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V. •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity.

2N7002K

N-Channel60-V(D-S)MOSFET

2N7002K

N-ChSmallSignalMOSFETwithESDProtection

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

2N7002K

N-ChannelMOSFETusesadvancedtrenchtechnology

2N7002K

SmallSignalMOSFET60V,380mA,Single,N?묬hannel,SOT??3

Features •ESDProtected •LowRDS(on) •SurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications

2N7002K

Plastic-EncapsulateMosfets

N-ChannelMOSFET FEATURES HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapability.

2N7002K

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002K

TrenchMOS??logiclevelFET

2N7002K

N-CHannelEnhancementModeMOSFET

HighSpeedSwitchingApplication Features •ESDrating:1000V(HBM) •LowOn-Resistance:RDS(on)