2N7002DW

N-ChannelEnhancementModeFieldEffectTransistor

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant

2N7002DW

OptiMOS??Small-Signal-Transistor

Features •DualN-channel •Enhancementmode •Logiclevel •Avalancherated •Fastswitching •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

2N7002DW

N-ChannelMOSFET

2N7002DW

SmallSignalMOSFET

SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–363

2N7002DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002DW

300mAmps,60VoltsDUALN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign

2N7002DW

N-ChannelMOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Ruggedandreliable •Voltagecontrolledsmallsignalswitch •OperatingJunctionTemperature:-55to+

2N7002DW

DualN-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=115mA(VGS=10V) ●RDS(ON)

2N7002DW

SOT-363Plastic-EncapsulateMOSFETs

DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002DW

DualN-channel