丝印：20N；Package：SOT-363；SiGe:C Low Noise Amplifier with Bypass Switch

文件：1.11395 Mbytes 页数：24 Pages

恩XP

丝印：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.2281 Mbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.3482 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：20N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 20N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：681.75 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：20N60A4D；Package：TO-247；SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only mode

文件：388.62 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：20N03L；Package：TO-252-3-1；OptiMOS Buck converter series

OptiMOS Buck converter series Feature • N-Channel • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters

文件：158.76 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：20N03L；Package：PG-TO252-3；OptiMOS??Buck converter series

Feature • N-Channel • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • 175°C operating temperature • dv/dt rated • Ideal for fast switching buck converters • Pb.free lead plating, RoHS compliant

文件：9.34933 Mbytes 页数：9 Pages

Infineon

英飞凌

丝印：20NP1006S；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =10A RDS(ON)

文件：417.93 Kbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：20N03L；Package：TO-252；30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

文件：447.31 Kbytes 页数：5 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：20N03L；Package：TO-252；30V N-Channel MOSFET

Features • Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for use in Bridge Circuits • IDSS and V (on)Specified at Elevated Temperatures • High Avalanche Energy Specified Typical Applications • Power Supplies • Inductive Loads •

文件：447.31 Kbytes 页数：5 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司