PDTC115EMB

Marking：00110001；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓

PDTC115TMB

Marking：00110010；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 100 k廓, R2 = open

PDTC123TMB

Marking：00110101；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = open

PDTC123YMB

Marking：00110110；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 10 k廓

PDTC124TMB

Marking：00111000；Package：SOT883B；NPN resistor-equipped transistor; R1 = 22 k廓, R2 = open

PESD5V0S2BQA

Marking：000110；Package：DFN1010D-3；Protection against high surge currents in ultra small DFN1010D-3 package

PESD5V0U2BMB

Marking：00011010；Package：DFN1006B-3；Ultra low capacitance bidirectional double ESD protection array

PESD5V0V2BMB

Marking：00110100；Package：DFN1006B-3；Very low capacitance bidirectional ESD protection diodes

PMEG4020EPK

Marking：00010000；Package：DFN1608D-2；40 V, 2 A low VF MEGA Schottky barrier rectifier

PMXB75UPE

Marking：000100；Package：DFN1010D-3；20 V, P-channel Trench MOSFET