NTMTS001N06CTXG

Marking：001N06C；Package：POWER88；Power MOSFET 60 V, 0.91 m, 376 A, Single N?묬hannel

NTMTS002N10MCTXG

Marking：002N10MC；Package：DFNW8；MOSFET - Power, Single N-Channel 100 V, 2.3 m, 236 A

NTMTSC002N10MCTXG

Marking：002N10M；Package：POWER88；MOSFET - Power, Single N-Channel 100 V, 2.0 m, 236 A

NTMYS003N08LHTWG

Marking：003N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

NTMYS006N08LHTWG

Marking：006N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 6.2 m, 77 A

NTMYS008N08LHTWG

Marking：008N08LH；Package：LFPAK4；MOSFET- Power, Single N-Channel 80 V, 8.8 m, 59 A

NX7002BKXB

Marking：000101；Package：DFN1010B-6；60 V, dual N-channel Trench MOSFET

PACDN006MR

Marking：006R；Package：MSOP-8；6-Channel ESD Protection Array

PBHV8515QA

Marking：000011；Package：DFN1010D-3；150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor

PDTA113EMB

Marking：00011100；Package：SOT883B；PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 1 k廓