丝印：GB3HF60HD；Package：D2PAK；4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re

文件：1.32745 Mbytes 页数：26 Pages

STMICROELECTRONICS

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4.5 A, 600 V very fast IGBT with Ultrafast diode

These devices are based on a new advanced planar technology concept to yield an IGBT withmore stable switching performance (Eoff) versus temperature, as well as lowerconduction losses.\n • Minimal tail current\n• Low conduction and switching losses• Ultrafast soft recovery antiparallel diode;

ST

意法半导体

4.5 A, 600 V very fast IGBT with Ultrafast diode

Features ■ Minimal tail current ■ Low conduction and switching losses ■ Ultrafast soft recovery antiparallel diode Applications Motor drive Description The STGD3HF60HD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) v

文件：925.43 Kbytes 页数：16 Pages

STMICROELECTRONICS

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3 A, 600 V ultra fast IGBT

Features ■ Minimal tail current ■ Low conduction and switching losses ■ Ultra fast soft recovery antiparallel diode Applications ■ High frequency inverters ■ Motor drives Description The HF family is based on a new advanced planar technology concept to yield an IGBT with more stable

文件：228.99 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re

文件：1.32745 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体