N-channel 600V - 10A - DPAK Short circuit rated PowerMESH TM IGBT

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10 A, 600 V short-circuit rugged IGBT

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丝印：GD10NC60KD；Package：DPAK；10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

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STMICROELECTRONICS

意法半导体

N-channel 600V - 10A - DPAK Short circuit rated PowerMESH TM IGBT

文件：467.28 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

10 A, 600 V short-circuit rugged IGBT

文件：613.22 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 10A - DPAK Short circuit rated PowerMESH TM IGBT

ST

意法半导体

10 A、600 V短路保护IGBT，DPAK封装

These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. • Lower on voltage drop (VCE(sat)) \n• Lower Cres / Cies ratio (no cross-conduction susceptibility) \n• Very soft ultra fast recovery antiparallel diode \n• Short-circuit withstand time 10 μs;

ST

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 20A 62W DPAK

STMICROELECTRONICS

意法半导体