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STGD10NC60KDT4

丝印:GD10NC60KD;Package:DPAK;10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

文件:1.6576 Mbytes 页数:30 Pages

STMICROELECTRONICS

意法半导体

GD10NC60KD

N-channel 600V - 10A - DPAK Short circuit rated PowerMESH TM IGBT

文件:467.28 Kbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    GD10NC60KD

  • 功能描述:

    IGBT 晶体管 N Ch 600V 10A

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST/意法
2447+
TO252
9657
只做原装正品假一赔十为客户做到零风险!!
询价
ST
23+
TO252
6996
只做原装正品现货
询价
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ST
24+
TO-252
7500
询价
STM
24+/25+
DPAK(TO-252)
2500
原装正品现货库存价优
询价
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
询价
ST
23+
TO-252
8560
受权代理!全新原装现货特价热卖!
询价
ST全系列
25+23+
TO-252
26163
绝对原装正品全新进口深圳现货
询价
STM
2018+
26976
代理原装现货/特价热卖!
询价
ST
2017+
SOP-8
30000
原装正品,诚信经营
询价
更多GD10NC60KD供应商 更新时间2025-9-20 18:21:00