丝印：GF3HF60HD；Package：TO-220FP；4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re

文件：1.32745 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

4.5 A, 600 V very fast IGBT with Ultrafast diode

These devices are based on a new advanced planar technology concept to yield an IGBT withmore stable switching performance (Eoff) versus temperature, as well as lowerconduction losses.\n • Minimal tail current\n• Low conduction and switching losses• Ultrafast soft recovery antiparallel diode;

ST

意法半导体

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 7.5A TO220FP

STMICROELECTRONICS

意法半导体

4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re

文件：1.32745 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体