首页 >STGD10NC60H>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
STGD10NC60H | N-channel 10A - 600V - DPAK Very fast PowerMESH??IGBT 文件:428.18 Kbytes 页数:14 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
丝印:GD10NC60HD;Package:DPAK;600 V - 10 A - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov 文件:771.12 Kbytes 页数:19 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
600 V - 10 A - very fast IGBT 文件:774.03 Kbytes 页数:19 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
STGD10NC60H | N-channel 10 A, 600 V, DPAK very fast PowerMESH(TM) IGBT Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix \\\"H\\\" identifies a family optimized for high frequency applications in order to achieve very hig Low on-voltage drop V\ncesat\nLow C\nRES/C\nIES ratio (no cross-conduction susceptibility); | ST 意法半导体 | ST | |
Very fast \H\ series This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior. Low on-voltage drop (V\nCE(sat))\nVery soft ultra fast recovery antiparallel diode\nLow C\nRES / C\nIES ratio (no cross-conduction susceptibility); | ST 意法半导体 | ST | ||
N沟道600 V、10 A超快IGBT This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications.\n\n • Low on-voltage drop (VCE(sat)) \n• Low CRES / CIES ratio (no cross-conduction susceptibility); | ST 意法半导体 | ST | ||
Package:TO-252-3,DPak(2 引线 + 接片),SC-63;包装:卷带(TR) 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 20A 62W D2PAK | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
Package:TO-252-3,DPak(2 引线 + 接片),SC-63;包装:管件 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 20A 60W DPAK | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
技术参数
- Package:
DPAK
- Grade:
Industrial
- VCES_max(V):
600
- PTOT_max(W):
60
- Freewheeling diode:
false
- IC_max(@ Tc=100°C)(A):
10
- IC_max(@ Tc=25°C)(A):
20
- VCE(sat)_typ(V):
1.9
- Qg_typ(nC):
19.2
- Eon_typ(mJ):
0.03
- Eoff_typ(mJ):
0.17
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO252DPAK |
8866 |
询价 | |||
ST |
24+ |
TO-252 |
65200 |
一级代理/放心采购 |
询价 | ||
ST |
22+ |
TO252DPAK |
6000 |
十年配单,只做原装 |
询价 | ||
ST/意法 |
22+ |
TO252DPAK |
96839 |
询价 | |||
ST |
25+ |
TO252DPAK |
35628 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ST/意法 |
24+ |
TO-252 |
39197 |
郑重承诺只做原装进口现货 |
询价 | ||
ST |
26+ |
SOT-89 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
询价 | ||
ST |
2016+ |
TO252 |
5000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ST全系列 |
25+23+ |
DPAK |
26159 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
2447 |
TO252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
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