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STGD10NC60H

N-channel 10A - 600V - DPAK Very fast PowerMESH??IGBT

文件:428.18 Kbytes 页数:14 Pages

STMICROELECTRONICS

意法半导体

STGD10NC60HDT4

丝印:GD10NC60HD;Package:DPAK;600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

文件:771.12 Kbytes 页数:19 Pages

STMICROELECTRONICS

意法半导体

STGD10NC60HDT4

600 V - 10 A - very fast IGBT

文件:774.03 Kbytes 页数:19 Pages

STMICROELECTRONICS

意法半导体

STGD10NC60H

N-channel 10 A, 600 V, DPAK very fast PowerMESH(TM) IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix \\\"H\\\" identifies a family optimized for high frequency applications in order to achieve very hig Low on-voltage drop V\ncesat\nLow C\nRES/C\nIES ratio (no cross-conduction susceptibility);

ST

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STGD10NC60HD

Very fast \H\ series

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Low on-voltage drop (V\nCE(sat))\nVery soft ultra fast recovery antiparallel diode\nLow C\nRES / C\nIES ratio (no cross-conduction susceptibility);

ST

意法半导体

STGD10NC60HT4

N沟道600 V、10 A超快IGBT

This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications.\n\n • Low on-voltage drop (VCE(sat)) \n• Low CRES / CIES ratio (no cross-conduction susceptibility);

ST

意法半导体

STGD10NC60HDT4

Package:TO-252-3,DPak(2 引线 + 接片),SC-63;包装:卷带(TR) 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 20A 62W D2PAK

STMICROELECTRONICS

意法半导体

STGD10NC60HT4

Package:TO-252-3,DPak(2 引线 + 接片),SC-63;包装:管件 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 20A 60W DPAK

STMICROELECTRONICS

意法半导体

技术参数

  • Package:

    DPAK

  • Grade:

    Industrial

  • VCES_max(V):

    600

  • PTOT_max(W):

    60

  • Freewheeling diode:

    false

  • IC_max(@ Tc=100°C)(A):

    10

  • IC_max(@ Tc=25°C)(A):

    20

  • VCE(sat)_typ(V):

    1.9

  • Qg_typ(nC):

    19.2

  • Eon_typ(mJ):

    0.03

  • Eoff_typ(mJ):

    0.17

供应商型号品牌批号封装库存备注价格
ST
24+
TO252DPAK
8866
询价
ST
24+
TO-252
65200
一级代理/放心采购
询价
ST
22+
TO252DPAK
6000
十年配单,只做原装
询价
ST/意法
22+
TO252DPAK
96839
询价
ST
25+
TO252DPAK
35628
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ST/意法
24+
TO-252
39197
郑重承诺只做原装进口现货
询价
ST
26+
SOT-89
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
询价
ST
2016+
TO252
5000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ST全系列
25+23+
DPAK
26159
绝对原装正品全新进口深圳现货
询价
ST
2447
TO252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多STGD10NC60H供应商 更新时间2026-2-3 15:30:00