Description

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

Features

■ Low on-voltage drop (VCE(sat))

■ Low CRES / CIES ratio (no cross-conduction

susceptibility)

■ Very soft ultra fast recovery antiparallel diode

Applications

■ High frequency motor controls

■ SMPS and PFC in both hard switch and

resonant topologies

■ Motor drivers

STGD10NC60HDT4属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。意法半导体（ST）集团制造生产的STGD10NC60HDT4晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。