7 A, 1200 V very fast IGBT with ultrafast diode

Description This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode. Features ■ High voltage capability ■ High speed ■ Very soft ult

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丝印：GB3NC120HD；Package：D2PAK；7 A, 1200 V very fast IGBT with ultrafast diode

Description This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode. Features ■ High voltage capability ■ High speed ■ Very soft ult

文件：769.83 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

7 A、1200 V超快IGBT，带超高速二极管

This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode. • High voltage capability \n• High speed \n• Very soft ultrafast recovery anti-parallel diode;

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7 A, 1200 V very fast IGBT with ultrafast diode

These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. • Low on voltage drop (VCE(sat)) \n• Very soft ultra-fast recovery antiparallel diode;

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