650 V、4 A沟槽栅场截止低损耗M系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, • 6 µs of short-circuit withstand time \n• VCE(sat) = 1.6 V (typ.) @ IC = 4 A \n• Tight parameter distribution \n• Safer paralleling \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode;

ST

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Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：1.16759 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

文件：448.18 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：1.09091 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：983.16 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体