STGD4M65DF2中文资料意法半导体数据手册PDF规格书

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss and

the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

特性 Features

• 6 µs of short-circuit withstand time

• VCE(sat) = 1.6 V (typ.) @ IC = 4 A

• Tight parameter distribution

• Safer paralleling

• Low thermal resistance

• Soft and very fast recovery antiparallel diode

Applications

• Motor control

• UPS

• PFC