丝印：G4M65DF2；Package：DPAK；Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

文件：448.18 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

文件：1.09091 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

650 V、4 A沟槽栅场截止低损耗M系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe • 6 µs of short-circuit withstand time \n• VCE(sat) = 1.6 V (typ.) @ IC = 4 A \n• Tight parameter distribution \n• Safer paralleling \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode;

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意法半导体

Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

文件：448.18 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体