STGD4M65DF2

Marking：G4M65DF2；Package：DPAK；Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefieldstopstructure.ThedeviceispartoftheMseriesIGBTs,whichrepresentanoptimal balancebetweeninvertersystemperformanceandefficiencywherethelow-lossand theshort-circuitfunctionalityise

STGD4M65DF2

650 V、4 A沟槽栅场截止低损耗M系列IGBT; • 6 µs of short-circuit withstand time \n• VCE(sat) = 1.6 V (typ.) @ IC = 4 A \n• Tight parameter distribution \n• Safer paralleling \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode;

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.\n\n

STGD4M65DF2

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

STGD4M65DF2_V01

Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefieldstopstructure.ThedeviceispartoftheMseriesIGBTs,whichrepresentanoptimal balancebetweeninvertersystemperformanceandefficiencywherethelow-lossand theshort-circuitfunctionalityise

G4M65DF2

Trenchgatefield-stop,650V,4A,Mserieslow-lossIGBT

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefieldstopstructure.ThedeviceispartoftheMseriesIGBTs,whichrepresentanoptimal balancebetweeninvertersystemperformanceandefficiencywherethelow-lossand theshort-circuitfunctionalityise

STGB4M65DF2

Trenchgatefield-stopIGBT,Mseries650V,4Alowloss

STGF4M65DF2

Trenchgatefield-stopIGBT,Mseries650V,4Alowloss