Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is e

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STMICROELECTRONICS

意法半导体

st
TO-263

st

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st
TO-263

st

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ST
SOT227

ST

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ST/意法
TO-220F

ST/意法

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