DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding perfomances.

■ HIGH INPUT IMPEDANCE

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH FREQUENCY OPERATION

■ TYPICAL SHORT CIRCUIT WITHSTAND TIME

5micro S-family, 4 micro H family

■ CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGD3NB60HDT4属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。意法半导体（ST）集团制造生产的STGD3NB60HDT4晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。