丝印：GAP2HDM；Package：SO-36W；Galvanically isolated 4 A dual gate driver

Features • High voltage rail up to 1200 V • Driver current capability: 4 A sink/source @ 25 °C • dV/dt transient immunity ±100 V/ns • Overall input-output propagation delay: 75 ns • Separate sink and source option for easy gate driving configuration • 4 A Miller CLAMP • UVLO function • Con

文件：803.17 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

丝印：GAP2HDM；Package：SO-36W；Galvanically isolated 4 A dual gate driver

Features • High voltage rail up to 1200 V • Driver current capability: 4 A sink/source @ 25 °C • dV/dt transient immunity ±100 V/ns • Overall input-output propagation delay: 75 ns • Separate sink and source option for easy gate driving configuration • 4 A Miller CLAMP • UVLO function • Con

文件：803.17 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

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SOIC-8

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TO-263

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上传：深圳市汇创佳电子科技有限公司

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TO-263

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上传：深圳市汇创佳电子科技有限公司