N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

文件：379.54 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

10 A, 600 V short-circuit rugged IGBT

文件：613.22 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT

文件：526.13 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：GB10NC60KD；Package：D2PAK；10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

文件：1.6576 Mbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

文件：379.54 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

10 A, 600 V short-circuit rugged IGBT

文件：613.22 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

10 A, 600 V short-circuit rugged IGBT

文件：613.22 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT

文件：526.13 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

10 A、600 V短路保护IGBT，D2PAK封装

These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. • Lower on voltage drop (VCE(sat)) \n• Lower Cres / Cies ratio (no cross-conduction susceptibility) \n• Very soft ultra fast recovery antiparallel diode \n• Short-circuit withstand time 10 μs;

ST

意法半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 20A 65W D2PAK

STMICROELECTRONICS

意法半导体