Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.11098 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

ST
D2PAK

ST

上传：深圳市美光存储技术有限公司

ST/意法
TO-263

ST/意法

上传：深圳庞田科技有限公司

st
TO-263

st

上传：深圳市汇创佳电子科技有限公司

st
TO-263

st

上传：深圳市汇创佳电子科技有限公司