N-channel 650 V - 0.43 廓 - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

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STMICROELECTRONICS

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N-channel 650 V, 0.43 廓, 9 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK

文件：527.2 Kbytes 页数：17 Pages

STMICROELECTRONICS

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丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

文件：305.59 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.43 廓, 9 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK

文件：527.2 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.03519 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 650 V, 0.43 Ohm, 9 A, DPAK second generation MDmesh(TM) Power MOSFET

This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high effi 100% avalanche tested\nLow gate input resistance\nLow input capacitance and gate charge;

ST

意法半导体