N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages

Description These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：1.31186 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages

Description These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：1.31186 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

丝印：DPAK；Package：TO-252；isc N-Channel Mosfet Transistor

文件：308.18 Kbytes 页数：2 Pages

ISC

无锡固电

Automotive-grade N-channel 500 V, 0.285 typ., 12 A MDmeshTM II Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical

文件：645.05 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a DPAK package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • Designed for automotive applications and AEC-Q101 qualified\n• 100% avalanche tested• Low input capacitance and gate charge\n• Low gate input resistance;

ST

意法半导体

汽车级N沟道500 V、0.28 Ohm典型值、12 A MDmesh II功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d • AEC-Q101 qualified \n• 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体