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STD11N65M5

N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件:1.2819 Mbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

STD11N65M5

N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件:1.2819 Mbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

STD11N65M5

丝印:DPAK;Package:TO-252;isc N-Channel MOSFET Transistor

文件:306.09 Kbytes 页数:2 Pages

ISC

无锡固电

STF11N65M5

isc N-Channel MOSFET Transistor

文件:291.95 Kbytes 页数:2 Pages

ISC

无锡固电

STF11N65M5

N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件:1.2819 Mbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

STF11N65M5

N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件:1.2819 Mbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    STD11N65M5

  • 功能描述:

    MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh V MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
23+
TO252
6996
只做原装正品现货
询价
ST/意法
24+
TO-252
6000
只做原厂渠道 可追溯货源
询价
ST专家
2021+
DPAK
6800
原厂原装,欢迎咨询
询价
ST(意法半导体)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。
询价
ST
23+
TO252
6800
原装正品,支持实单
询价
ST/意法
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
询价
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
询价
ST专家
25+23+
DPAK
29285
绝对原装正品全新进口深圳现货
询价
三年内
1983
只做原装正品
询价
ST
20+
TO-252-3
69052
原装优势主营型号-可开原型号增税票
询价
更多STD11N65M5供应商 更新时间2025-10-5 14:24:00