N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi

文件：530.46 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

文件：756.46 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：324.69 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

文件：756.46 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.37 Ohm典型值、10 A FDmesh II功率MOSFET，DPAK封装

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. • Fast-recovery body diode \n• Low gate charge and input capacitance \n• Low on-resistance RDS(on) \n• 100% avalanche tested \n• High dv/dt ruggedness;

ST

意法半导体