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STD11NM60ND中文资料意法半导体数据手册PDF规格书
STD11NM60ND规格书详情
描述 Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
特性 Features
■ The worldwide best RDS(on)* area amongst the
fast recovery diode devices
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
产品属性
- 型号：
STD11NM60ND
- 功能描述：
MOSFET N-channel 600V, 10A FDMesh II
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
24+ |
TO-252-3 |
16960 |
原装正品现货支持实单 |
询价 | ||
ST(意法) |
25/26+ |
9000 |
全新、原装 |
询价 | |||
ST/意法半导体 |
26+ |
TO-252-3 |
8000 |
原装现货 极速发货 一站式原装元器件BOM配单 |
询价 | ||
ST |
24+ |
TO252DPAK |
8866 |
询价 | |||
ST/意法半导体 |
26+ |
TO-252-3 |
10000 |
十年沉淀唯有原装 |
询价 | ||
STMicroelectronics |
21+ |
DPAK |
2500 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
STM |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
ST |
1839+ |
TO-252 |
30 |
上传都是百分之百进口原装现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 |
