首页>STD11NM60ND>规格书详情
STD11NM60ND中文资料意法半导体数据手册PDF规格书
STD11NM60ND规格书详情
描述 Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
特性 Features
■ The worldwide best RDS(on)* area amongst the
fast recovery diode devices
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
产品属性
- 型号：
STD11NM60ND
- 功能描述：
MOSFET N-channel 600V, 10A FDMesh II
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
25+ |
N/A |
11580 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
询价 | ||
ST/意法半导体 |
26+ |
TO-252-3 |
60000 |
只有原装 可配单 |
询价 | ||
ST/意法 |
18+ |
TO-252 |
245 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法半导体 |
23+ |
TO-252-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法 |
2450+ |
TO252 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 | ||
STMicroelectronics Asia Pacifi |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 |
