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STD11NM60N-1中文资料PDF规格书
STD11NM60N-1规格书详情
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
产品属性
- 型号:
STD11NM60N-1
- 功能描述:
MOSFET N Ch 600V 0.37 Ohm 10A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
20+ |
TO-252 |
25000 |
全新原装现货,假一赔十 |
询价 | ||
ST/意法 |
TO252 |
265209 |
假一罚十,原包原标签,常备现货 |
询价 | |||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法半导体 |
2021+ |
TO-252-3 |
7600 |
原装现货,欢迎询价 |
询价 | ||
ST |
1746+ |
to252 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
ST |
2020+ |
TO252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
STM原厂目录 |
23+ |
DPAK |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
STMicro. |
23+ |
D2PAK |
7750 |
全新原装优势 |
询价 | ||
ST |
1709+ |
TO-252/D-PAK |
32500 |
普通 |
询价 |